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T15
Taimuratova, L. U.
Negative longitudinal magnetoresistance silikon on interline electron transitions. [Текст] / L. U. Taimuratova, O. D. Bigozha, A. Zh. Kazbekova, Z. K. Aimaganbetova // News of national academy of sciences of the republic of Kazakhstan. . - 2021. - №6. - P. 37-41
Рубрики: physics
Кл.слова (ненормированные):
piezo resistance -- negative magnetoresistance -- uniaxial pressure -- is energetic -- multivalley model -- valley crossing
Аннотация: The article presents experimental results obtained by studying the magnetoresistance of n-type silicon with an electron concentration of. nе=3,1-1013см-3 in the temperature range of 77.4-300K.There is a negative longitudinal magnetoresistance due to the redistribution of electrons between thevalleys. Experimental results are compared with existing theories and a good agreement is obtained bothquantitatively and qualitatively. At H=350 kE, the energy gap between the lowest Landau subzones is 7 MeV.These experimental results obtained in n-type silicon clearly demonstrate the reliability of the mechanismof negative magnetoresistance caused, indeed, by the pumping of current carriers between the valleys of theconduction band, shifting along the energy scale in a quantizing magnetic field at different speeds. The isenergetic surface of the bottom of the silicon conduction band consists of six ellipsoids located on the mainaxes of the cube, which causes anisotropy of the effective mass and relaxation time. The latter determines thefeatures of galvanomagnetic effects. Especially magnetoresistance is the most sensitive to the anisotropy ofthe is energetic surface. The influence of the latter on magnetoresistance is most clearly revealed in the regionof strong magnetic fields, where magnetoresistance is saturated.
Держатели документа:
WKU
Доп.точки доступа:
Bigozha, O.D.
Kazbekova, A. Zh.
Aimaganbetova, Z.K.
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